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Oso Semiconductor is seeking a Principal RFIC Design Engineer specializing in power amplifier design to join the core design team. In this senior technical role, you will own the complete design lifecycle of high-efficiency millimeter-wave (mmWave) power amplifiers and associated transmit-chain circuitry for next-generation beamformer ICs.
Your responsibilities will include:
- Design, simulation, layout, and validation of high-efficiency mmWave power amplifiers
- Deep ownership of PA performance across the full spectrum: transistor selection, architecture optimization, efficiency, linearity, thermal management, and reliability
- Collaboration with founding engineers on power amplifier architecture and integration strategy
- Development of multi-channel SATCOM, radar, and 5G beamforming products
- Package-level behavior analysis and optimization
- Integration of PA designs into complex multi-channel systems
This is a hands-on technical leadership role where you will drive innovation in RF power amplifier design for defense and aerospace applications. You will work directly with senior technical founders and have significant influence over product architecture and performance.
Requirements:
The posting does not explicitly state formal requirements such as years of experience, required education, or specific certifications. However, the role clearly expects deep expertise in RFIC design, power amplifier design, mmWave circuit design, and familiarity with SATCOM, radar, or 5G applications. Candidates should have proven experience in PA design from transistor level through package integration, simulation tools proficiency, and layout expertise.
